, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. vn3oab, vn35ab, vn67ab, vn89ab, vn90ab n-channel enhancement-mode vertical power mosfet features ? high speed, high current switching ? current sharing capability when paralleled ? directly interface to cmos, dtl, ttl. logic ? simple dc biasing ? extended safe operating area ? inherently temperature stable applications ? switching power supplies ? dc to dc inverters ? cmos and ttl to high current interface 1 ? line drivers ? logic buffers ? pulse amplifiers absolute maximum ratings (ta = 25 c unless otherwise noted) drain-source voltage VN30AB. vn35ab 35v vim67a8 50v vn89ab 80v vn90ab 90v drain-gate voltage VN30AB, vn35ab 35v vn67ab 60v vn89ab 80v vn9qab 90v continuous drain current (see note 1) 1.2a peak drain current (see note 2} 3.0a continuous forward gate current 2.0ma peak-gate forward current 100ma peak-gate reverse current 100ma gate-source forward (zener) voltage +15v gate-source reverse (zener) voltage. -0.3v thermal resistance, junction to case 20c/w continuous device dissipation at (or below) 25c case temperature 6.25w linear derating factor 50mw/c operating junction temperature range -55 to +150c storage temperature range -55 to +150c lead temperature (1/16 in. from case for 10 sec) +300c note 1. tc = 25c; controlled by typical rosion) and maximum power dissipation. not* 2. pulse width 80/*sec, duty cycle 1.0%, not* 3. the drain-source diode is an integral part of the mosfet structure. schematic diagram (outline dwg. to-39) drain o gateo sourcc body internally connected to source. drain common to caie. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
VN30AB, vn35ab, vm67ab, vn89ab, vn9oab electrical characteristics (25"c unless otherwise noted) 1 "z~ t 4 5 e 7 b 9 10 it" 12 1 a t 1 c d v n a m 1 c chaaactmisttc bvoss drain source breakdown voslif. > one thruhold votl?o? loss gate-body leakage zero gate voltage 'oss ? drain current drain-source on-stit* *'""" fi?,,tanc. (note 1) on slate drain current l0""-' (not.1, gfs forward transconductance cm input capacitance (note 2) reverse transfer '" capacitance (note 2) common source output com capacitance (note 2) tor, turn-on time (note it ton turn-off time (now 2) vnmab kin 35 0*' 1.0 ttp 1,2 0.01 22 2.0 250 i t max 0.5 10 6.0 5.0 50 10 jo 10 10 vnttab urn 35 0.8 1.0 ttp 1.2 001 22 10 250 4 4 max k 0.5 10 4.5 2.5 r so 10 40 10 10 vntta* min 60 o.a 1.0 typ 1.2 0.01 2.2 ?0 250 4 4 max r o.s 10 5.1 3.5 so 10 40 10 10 vmwab min 60 0.8 1.0 typ 12 0-01 :>2 2.0 250 4 4 max 06 10 5.1 4.5 50 10 40 10 10 vmmat min 90 0.8 1.0 tvp 1.2 0.01 22 20 250 4 4 max os 10 e.o 5.0 50 10 40 10 10 unit v ca 11 a mfl pf ns test conditions id = 10|*a. v3s " 0 lo ? 1 oma, vds ? vgs vos = inv, vtis = o vos - 2sv, vb5 - 0 vos = sv. id ? 300ma vos= 10v, id- l.oa vos = 2sv, v.j5 - 10v vos = 25v. ip = 0.5a vos = 0, vds = s4v, t = 1 -ombz natal. pul? tmt ? sample test. ii. 1h duty cycle. thermal response t, - time (mi?) power dissipation vs case or ambient temperature 0 *40 +w + 120 *wfl 4-200 t - temperature co dc safe operating region tc = 25c 1 10 100 vds - or aim to source voltage (volts) breakdown voltage variation with temperature q s 1.1 >8 -40 -20 0 26 40 *0 m 100 120140 temp(ratut|c - 'c
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